Contamination in a scanning electron microscope and the influence of specimen cooling
- 1 March 1994
- Vol. 16 (2) , 101-110
- https://doi.org/10.1002/sca.4950160207
Abstract
Solutions of the stationary and time‐dependent equations of diffusion are presented for contamination when scanning a rectangular area in the scanning electron microscope (SEM). A method is described to record the thickness of the contamination layer by the signal of secondary or backscattered electrons and to measure the influence of electron current density, beam energy, and specimen cooling on the contamination rate.Keywords
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