Internal photoemission in sapphire substrates
- 15 October 1972
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (8) , 370-372
- https://doi.org/10.1063/1.1654417
Abstract
Electron injection has been accomplished in a thick (10–20 mil) ordered insulator (single-crystal sapphire), using an internal photoemission technique. It is shown that transport properties of electrons in ordered insulators can be easily measured using this technique.Keywords
This publication has 4 references indexed in Scilit:
- Experimental Evidence of Hot-Electron Transport through Thin Metal FilmsJournal of Applied Physics, 1972
- Internal Photoemission Measurements in a Metal-Al2O3–Si SystemJournal of Applied Physics, 1971
- Photoemission from Al–Al2O3 Films in the Vacuum Ultraviolet RegionJournal of Applied Physics, 1969
- Silicon-oxide interface studies by a photoelectric techniqueProceedings of the IEEE, 1969