Growth of thick 4H-SiC epilayers in a vertical radiant-heating reactor
- 1 January 2000
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Growth of very thick 4H-SiC epilayers up to 215 μm has been demonstrated in a vertical radiant-heating reactor. Surface roughness is maintained as small as ˜0.2 nm even for epilayers over 150 μm in thickness, and a regular step structure without macro step bunching is observed from the very thick epilayers indicating a stable step-flow growth. Photoluminescence and secondary ion mass spectroscopy (SIMS) were performed for a 150 μm-thick epilayer. The Photoluminescence showed strong free excitons and comparatively small nitrogen bound excitons, while aluminum-, boron- and titanium-related lines were almost negligible. The SIMS analysis found no impurities exceeding 1 × 1014 cm−3. The influence of growth parameters on thickness uniformity will also be shown.Keywords
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