Computer simulation of III–V MESFET's, MODFETT's and MIS-like FET's
- 31 August 1991
- journal article
- Published by Elsevier in Computer Physics Communications
- Vol. 67 (1) , 63-72
- https://doi.org/10.1016/0010-4655(91)90221-6
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Microwave performance of InAlAs/InGaAs/InP MODFET'sIEEE Electron Device Letters, 1987
- Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistorIEEE Electron Device Letters, 1986
- High-efficiency millimeter-wave GaAs/GaAlAs power HEMT'sIEEE Electron Device Letters, 1986
- Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technologyIEEE Transactions on Electron Devices, 1986
- Inverted GaAs/AlGaAs modulation-doped field-effect transistors with extremely high transconductancesIEEE Electron Device Letters, 1986
- High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistorsIEEE Electron Device Letters, 1985
- High Performance (AlAs/n-GaAs Superlattice)/GaAs 2DEGFETs with Stabilized Threshold VoltageJapanese Journal of Applied Physics, 1984
- n + -GaAs/undoped GaAlAs/undoped GaAs field-effect transistorElectronics Letters, 1984
- Metal-(n) AlGaAs-GaAs two-dimensional electron gas FETIEEE Transactions on Electron Devices, 1982
- Two-dimensional electron transport in semiconductor layers II: ScreeningJournal of Vacuum Science and Technology, 1981