A 2-20 GHz High-Gain Monolithic HEMT Distributed Amplifier
- 1 December 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 35 (12) , 1494-1500
- https://doi.org/10.1109/tmtt.1987.1133880
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- A High-Performance 2-18.5-GHz Distributed Amplifier- Theory and ExperimentIEEE Transactions on Microwave Theory and Techniques, 1986
- A 12-dB High-Gain Monolithic Distributed AmplifierIEEE Transactions on Microwave Theory and Techniques, 1986
- Negative Differential Mobility and Drift Velocity Overshoot in a Single Quantum Well of AlGaAs/GaAs/AlGaAs HeterostructurePublished by Springer Nature ,1986
- A 2—18-GHz monolithic distributed amplifier using dual-gate GaAs FET'sIEEE Transactions on Electron Devices, 1984
- 2-20-GHz GaAs Traveling-Wave AmplifierIEEE Transactions on Microwave Theory and Techniques, 1984
- On Noise in Distributed Amplifiers at Microwave FrequenciesIEEE Transactions on Microwave Theory and Techniques, 1983
- Enhancement of electron velocity in modulation-doped (Al,Ga)As/GaAs FETs at cryogenic temperaturesElectronics Letters, 1982
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975
- Characterization of Nonlinearities in Microwave Devices and SystemsIEEE Transactions on Microwave Theory and Techniques, 1973
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963