Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing

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Abstract
Postirradiation annealing was used to efficiently reduce the oxide leakage currents in MOS structures after sample preparation. Generally, it is found that leakage currents exist more or less in oxide no matter how the oxidation process changes. However, when a sample receives an irradiation of 60Co with a total dose of 106 rads (SiO2) and an anneal in N2 at 400°C for 10 minutes successively, its high-frequency and quasi-static capacitance-voltage (C-V) curves are nearly coincident in the accumulation region. It is shown that in each postirradiation annealing, the irradiation improves the oxide leakage current while the anneal recovers the radiation-induced damage. Both the bulk oxide leakage current and the surface leakage current are suitably improved after postirradiation annealing.