A model of the leakage current in n-channel silicon-on-sapphire most's
- 1 January 1978
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 13 (12) , 609-613
- https://doi.org/10.1051/rphysap:019780013012060900
Abstract
The existence of a direct drain to source leakage current is experimentally demonstrated on n-channel SOS MOS transistors. The measured currents are shown to vary according to a model of an inversion channel at the sapphire interface working in the weak inversion regime. A value of interface state density at the silicon sapphire interface of 1012 cm-2 eV-1 is determined by static I(V) measurementKeywords
This publication has 5 references indexed in Scilit:
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