Analysis of the interaction of an electron beam with back surface field solar cells
- 1 July 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (7) , 3938-3942
- https://doi.org/10.1063/1.332569
Abstract
In this paper the short circuit current ISC induced by the electron beam of a scanning electron microscope in a back surface field solar cell will be determined theoretically. It will be shown that, in a configuration used previously for solar cells with an ohmic back surface, the ISC gives a convenient means for estimating the back surface recombination velocities and thus the quality of back surface field cells. Numerical data will be presented applicable to a point source model for the electron–hole pair generation.This publication has 7 references indexed in Scilit:
- On the analysis of diffusion length measurements by SEMSolid-State Electronics, 1982
- Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistorsIEEE Transactions on Electron Devices, 1981
- Physics underlying the performance of back-surface-field solar cellsIEEE Transactions on Electron Devices, 1980
- On the determination of diffusion lengths by means of angle-lapped P-N junctionsSolid-State Electronics, 1979
- Analysis of the interaction of an electron beam with a solar cell—ISolid-State Electronics, 1978
- Theoretical effects of surface diffused region lifetime models on silicon solar cellsSolid-State Electronics, 1977
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976