Lattice location of heavy group III and V elements implanted into Ge

This publication has 10 references indexed in Scilit:

• THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
  Applied Physics Letters, 1970
• INFLUENCE OF n-TYPE DOPANTS ON THE LATTICE LOCATION OF IMPLANTED p-TYPE DOPANTS IN Si AND Ge
  Applied Physics Letters, 1969
• Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
  Journal of Applied Physics, 1969
• Evidence of a replacement reaction between ion implanted substitutional Tl dopants and interstitial Si atoms
  Radiation Effects, 1969
• LATTICE LOCATION OF DOPANT ELEMENTS IMPLANTED INTO Ge
  Applied Physics Letters, 1968
• Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
  Canadian Journal of Physics, 1968
• ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
  Canadian Journal of Physics, 1967
• An experimental study of the orientation dependence of (p,γ) yields in monocrystalline aluminum
  Nuclear Instruments and Methods, 1965
• Radiation Effects and Their Annealing inCo60-Gamma-Irradiated Sb-Doped Germanium
  Physical Review B, 1964
• Solid Solubilities of Impurity Elements in Germanium and Silicon*
  Bell System Technical Journal, 1960