Thermal stability of silicide contacts on GaAs using the proximity technique during rapid thermal annealing
- 1 March 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (3) , 193-195
- https://doi.org/10.1088/0268-1242/6/3/009
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctionsApplied Physics Letters, 1988
- Two-step rapid thermal annealing of Si-implanted InP:FeApplied Physics Letters, 1987
- Tungsten silicide Schottky contacts on GaAsJournal of Vacuum Science & Technology B, 1986
- Rapid thermal annealing of Si implanted GaAs for power field-effect transistorsApplied Physics Letters, 1985
- Characterization of tantalum-silicon films on GaAs at elevated temperaturesIEEE Electron Device Letters, 1983
- Infrared rapid thermal annealing of Si-implanted GaAsApplied Physics Letters, 1982
- The Al-(n-InP) Schottky barrierJournal of Physics D: Applied Physics, 1982
- Richardson constant of Al- and Au-GaAs Schottky barrier diodesApplied Physics Letters, 1977