High performance hydrogenated amorphous Si solar cells with graded boron-doped intrinsic layers prepared from disilane at high deposition rates
- 1 June 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (11) , 1092-1094
- https://doi.org/10.1063/1.94625
Abstract
High speed preparation of A1/nip/SnO2/indium tin oxide/Glass type amorphous Si solar cells from disilane is presented with emphasis on the boron doping profile during the intrinsic layer deposition. It was found that the cell characteristics strongly depend on the doping level and the profile of B2H6, and 8.05% and 6.85% conversion efficiencies were obtained with a linear graded doping profile at the deposition rates of 15 and 30 Å/s, respectively.Keywords
This publication has 5 references indexed in Scilit:
- High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilaneJournal of Applied Physics, 1984
- Effect of B2H6 profile on the performance of a-Si:H p-i-n solar cellsJournal of Non-Crystalline Solids, 1983
- Amorphous silicon solar cells with graded boron-doped active layersJournal of Applied Physics, 1983
- High performance hydrogenated amorphous silicon solar cells made at a high deposition rate by glow discharge of disilaneApplied Physics Letters, 1983
- Glow discharge preparation of amorphous hydrogenated silicon from higher silanesApplied Physics Letters, 1980