High deposition rate preparation of amorphous silicon solar cells by rf glow discharge decomposition of disilane

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Abstract
The optical and electrical properties of hydrogenated amorphous silicon films produced by rf glow discharge decomposition of disilane diluted in helium (Si2H6/He=1/9) have been studied while systematically varying the film deposition rate. The properties and composition of the films were monitored by measuring the optical band gap, IR vibrational spectrum, dark conductivity, and the photoconductivity as a function of the deposition rate. The photoluminescence of the high deposition rate films gave a peak at 1.33 eV. These films, whose properties are rather similar to those of the conventional a‐Si:H films prepared from monosilane, have been used to fabricate nip‐type a‐Si:H solar cells. At a deposition rate of 11 Å/sec, a conversion efficiency of 6.86% was obtained. This high efficiency shows that disilane is applicable for mass production fabrication of a‐Si:H solar cells.