Analysis of mixed conduction effects in semi-insulating gallium arsenide

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Abstract
Hall effect and conductivity measurements made on semi-insulating bulk GaAs are examined by a new approach to mixed conduction analysis. Based on Fermi level and electron mobility analyses of conductivity and Hall coefficient, it uses revised values of effective densities of states at the band edges and electron/hole mobility ratios recently adopted by other workers. The treatment provides a visual analysis of the system in terms of the electrical parameters and impurity densities, and establishes criteria for the onset of mixed conduction.