Amorphous Silicon Static Induction Transistor
- 1 April 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (4R)
- https://doi.org/10.1143/jjap.24.467
Abstract
A hydrogenated amorphous silicon (a-Si:H) Schottky-gate static induction transistor (SIT) is proposed and its characteristics are calculated for the case that the gap-state distribution in a-Si:H is constant near the Fermi level. It is found that an a-Si:H SIT with a gate spacing of about 5 µm can yield a sufficiently high ON/OFF current ratio of more than 108 when the gap-state density near the Fermi level is 5×l015 cm-3eV-1. The cut-off frequency of an a-Si:H SIT is expected to exceed a few MHz.Keywords
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