Insights into carrier recombination processes in1.3 µm GaInNAs-based semiconductor lasers attained using high pressure
- 18 January 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (2) , 92-93
- https://doi.org/10.1049/el:20010049
Abstract
The threshold current of 1.3 µm GaInNAs lasers increases by ~30% up to a pressure of 1 GPa compared with a decrease of ~15% for Auger-dominated InGaAsP devices, indicating that direct band-to-band Auger recombination is not important in these materials. The lasing energy varies sub-linearly with pressure, indicative of the increasing interaction of the N-level with the conduction band.Keywords
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