A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
- 1 February 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (2A) , L86
- https://doi.org/10.1143/jjap.39.l86
Abstract
We have obtained a high characteristic temperature (T 0) of 215 K from a 1.3 µm GaInNAs/GaAs single-quantum-well laser under pulsed operation at 20°C to 80°C. To our knowledge, this T 0 is the highest yet reported for 1.3 µm band edge emitters suitable for optical-fiber communication systems. The use of GaInNAs as an active layer is, therefore, very promising for the fabrication of long-wavelength laser diodes with excellent high-temperature performance.Keywords
This publication has 10 references indexed in Scilit:
- Nitrogen incorporation rate, optimal growth temperature, and AsH3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-sourceJournal of Crystal Growth, 1999
- 1.3-μm InAsP/InAlGaAs MQW lasers for high-temperature operationPublished by SPIE-Intl Soc Optical Eng ,1998
- 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasersIEEE Photonics Technology Letters, 1998
- Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser DiodeOptical Review, 1998
- High T 0 (140 K) and low-thresholdlong-wavelength strainedquantum well lasers on InGaAs ternary substratesElectronics Letters, 1997
- Room-temperature pulsed operationof 1.3 µm GaInNAs/GaAs laser diodeElectronics Letters, 1997
- Room-temperature continuous-wave operation of GaInNAs/GaAslaser diodeElectronics Letters, 1996
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layerIEEE Photonics Technology Letters, 1994
- Strained-layer InGaAs/GaInAsP/GaInP quantum well lasers grown by gas-source molecular beam epitaxyApplied Physics Letters, 1993