Magnetophonon-resonance theory of the two-dimensional electron gas in As/GaAs single heterostructures
- 15 October 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (11) , 7622-7634
- https://doi.org/10.1103/physrevb.38.7622
Abstract
The theory of the transverse magnetophonon effect in As/GaAs single heterostructures is developed by using the Kubo formula and Fang-Howard trial function. The oscillatory magnetoconductivity is evaluated by harmonic analysis including Landau-level broadening. The general oscillatory structure of the magnetoresistivity is shown to depend on and , the cyclotron and optical-phonon frequencies, as Δρ∼ for the case of a Lorentzian-type density of states, where the damping parameter γ is determined by the Landau-level broadening and given by γ=2Γ/ħ with the Landau-level broadening Γ. The Landau-level broadening is evaluated for the electron scattering by optical-phonon, acoustic-phonon, remote-impurity, background-impurity, and interface-roughness scatterings. It is shown that the dominant contribution to the broadening arises from the remote-impurity scattering which results in 2πγ proportional to / and of the order of unity. With use of the expressions of the Landau-level broadening, the magnetophonon resonance amplitude is calculated as a function of the sheet electron density in As/GaAs heterostructures, which shows a good agreement with the experimental observations by Brummell et al., indicating that the damping of the magnetophonon resonance in this system is dominated by the remote-impurity scattering.
Keywords
This publication has 29 references indexed in Scilit:
- GaAs structures with electron mobility of 5×106 cm2/V sApplied Physics Letters, 1987
- The magnetophonon effectProgress in Quantum Electronics, 1985
- Magnetophonon resonances of the two-dimensional electron gas in GaAs/AlGaAs heterostructuresSolid State Communications, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Observation of Magnetophonon Resonances in a Two-Dimensional Electronic SystemPhysical Review Letters, 1980
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Chapter 4 The Magnetophonon EffectPublished by Elsevier ,1975
- Electrons and optic phonons in solids-the effects of longitudinal optical lattice vibrations on the electronic excitations of solidsReports on Progress in Physics, 1973
- The magnetophonon effect in III-V semiconducting compoundsJournal of Physics C: Solid State Physics, 1968