Simulations of dislocation nucleation from atomic size surface steps and grooves
- 1 July 2001
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 309-310, 456-462
- https://doi.org/10.1016/s0921-5093(00)01701-9
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Nucleation of semicircular misfit dislocation loops from the epitaxial surface of strained-layer heterostructuresJournal of Applied Physics, 1996
- Growth morphology evolution and dislocation introduction in the InGaAsGaAs heteroepitaxial systemJournal of Crystal Growth, 1996
- In-situ HVEM study of dislocation generation in patterned stress fields at silicon surfacesPhysica Status Solidi (a), 1995
- Some general properties of stress-driven surface evolution in a heteroepitaxial thin film structureJournal of the Mechanics and Physics of Solids, 1994
- Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxationPhysical Review Letters, 1993
- Nucleation of a 60° glide dislocation in two-dimensional or three-dimensional growth of epilayersJournal of Electronic Materials, 1991
- Critical thickness during two-dimensional and three-dimensional epitaxial growth in semiconductor heterostructuresMaterials Science and Engineering: B, 1991
- Dislocation injection in strained multilayer structuresJournal of Applied Physics, 1990
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- COHERENT INTERFACES AND MISFIT DISLOCATIONSPublished by Elsevier ,1975