TRAPATT's: High Power Devices for Wide Pulse and CW Microwave Applications
- 1 December 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Parts, Hybrids, and Packaging
- Vol. 13 (4) , 344-348
- https://doi.org/10.1109/tphp.1977.1135220
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Filamentary thermal instabilities in IMPATT diodesIEEE Transactions on Electron Devices, 1977
- Fixed-tuned high-power F-band TRAPATT amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Theoretical solutions for the thermal spreading resistance of ring-geometry diodesIEEE Transactions on Electron Devices, 1972
- Computer simulation of low-frequency high-efficiency oscillations in germanium IMPATT diodesIEEE Transactions on Electron Devices, 1968
- High-power, high-efficiency silicon avalanche diodes at ultra high frequenciesProceedings of the IEEE, 1967
- Circuit for testing high-efficiency IMPATT diodesProceedings of the IEEE, 1967