Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate
- 14 February 2002
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 89 (1-3) , 360-363
- https://doi.org/10.1016/s0921-5107(01)00774-7
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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