Fundamentals of thin film growth
- 1 March 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 137 (1-2) , 212-223
- https://doi.org/10.1016/0022-0248(94)91274-2
Abstract
No abstract availableKeywords
This publication has 39 references indexed in Scilit:
- Optically monitoring and controlling epitaxial growthJournal of Crystal Growth, 1992
- Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor depositionApplied Physics Letters, 1992
- The role of step kinetics in MBE of compound semiconductorsJournal of Crystal Growth, 1991
- Radical-assisted organometallic vapor-phase epitaxial growth of GaAsApplied Physics Letters, 1991
- Atmospheric pressure atomic layer epitaxy: mechanisms and applicationsJournal of Crystal Growth, 1991
- Plasma MOVPE of ternary and quaternary layersJournal of Crystal Growth, 1991
- Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyPhysical Review B, 1990
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- Low temperature selective epitaxy of III–V compounds by laser assisted chemical vapor depositionJournal of Crystal Growth, 1988
- Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfacesJournal of Vacuum Science & Technology A, 1987