Stability of Amorphous Silicon Solar Cells
- 1 August 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Reliability
- Vol. R-31 (3) , 281-284
- https://doi.org/10.1109/tr.1982.5221338
Abstract
The present situation on the stability of amorphous silicon solar cells is discussed. Impurity diffusion is not expected to be a problem in normal cell operation. Interface contamination degrades Schottky barrier or MIS cells that are exposed to water vapor, but has no influence on p-i-n or n-i-p cells. Optically induced changes in the amorphous silicon have an influence, depending on cell structure and preparation conditions. Preliminary results on ≈ 5% efficiency n-i-p cells suggest that the efficiency will degrade by only 20% in 20 years of sunlight.Keywords
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