Dual-ion-beam sputter deposition of TiN films
- 15 May 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (10) , 7360-7362
- https://doi.org/10.1063/1.347596
Abstract
A dual-ion-beam technique for the deposition of TiN thin films is described. The metal-atom flux is supplied by sputtering a titanium target with an inert ion beam, while the reactive flux is supplied directly to the growing film by a low-energy ion beam. Results are presented for titanium films deposited at room temperature under a range of N+2 ion bombardment to form TiN. Analysis gives the incorporation of nitrogen, the background gas contamination, and the optical and electrical properties of TiN films.This publication has 13 references indexed in Scilit:
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