Chemical reaction at the interface between pentacene and
- 18 November 2005
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 72 (20)
- https://doi.org/10.1103/physrevb.72.205328
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- C 60 thin-film transistors with low work-function metal electrodesApplied Physics Letters, 2004
- Interface formation of pentacene on Al2O3Journal of Applied Physics, 2004
- Ambipolar organic field-effect transistor based on an organic heterostructureJournal of Applied Physics, 2004
- Influence of postannealing on polycrystalline pentacene thin film transistorJournal of Applied Physics, 2004
- Interface formation and energy level alignment of pentacene on SiO2Journal of Applied Physics, 2003
- Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glassApplied Physics Letters, 2003
- Characterization of pentacene organic thin film transistors fabricated on SiNx films by non-photolithographic processesThin Solid Films, 2002
- Energy Level Alignment and Interfacial Electronic Structures at Organic/Metal and Organic/Organic InterfacesAdvanced Materials, 1999
- HOMO/LUMO Alignment at PTCDA/ZnPc and PTCDA/ClInPc Heterointerfaces Determined by Combined UPS and XPS MeasurementsThe Journal of Physical Chemistry B, 1999
- Pentacene organic thin-film transistors-molecular ordering and mobilityIEEE Electron Device Letters, 1997