Quantum distributed model of the resonant tunneling transistor
- 1 March 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (3) , 294-298
- https://doi.org/10.1109/16.275212
Abstract
Two-dimensional simulation is crucial in the analysis of the transport characteristics of a resonant tunneling transistor that has a base electrode attached to the well region of a double barrier structure because of the transistor's two-dimensional heterogeneousness. We propose a novel numerical model of the resonant tunneling transistor that includes two-dimensional potential distribution and two-dimensional spatial current distribution. By using this mode in the present model, it is found that the transistor's I-V characteristics are strongly dependent on its internal well resistance.Keywords
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