CMOS device scaling beyond 100 nm
- 11 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channelsIEEE Transactions on Electron Devices, 1999
- A 0.1-μm delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxyIEEE Transactions on Electron Devices, 1998