Analytical description for the diffusion and recombination of point defects in silicon
- 10 April 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (15) , 1415-1417
- https://doi.org/10.1063/1.100684
Abstract
A simplified analysis is given of point-defect diffusion in the presence of traps which saturate on recombination. Examples of this phenomenon are self-interstitial diffusion and gettering in Czochralski silicon, and coupled interstitial-vacancy diffusion in perfect crystalline silicon. When recombination is diffusion limited, a simple diffusion equation is obtained, with an effective diffusivity D̃ which is an analytical function of the point-defect and trap concentrations. The physical meaning of this function is described.Keywords
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