1D Simulation of Oxidation-Enhanced and Oxidation-Retarded Diffusion in Silicon and Validity of the Physical Model. Transition to the 2D Case
- 16 February 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 93 (2) , 523-533
- https://doi.org/10.1002/pssa.2210930216
Abstract
No abstract availableKeywords
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