Morphological stability of strained-layer semiconductors

This publication has 13 references indexed in Scilit:

• Competing relaxation mechanisms in strained layers
  Physical Review Letters, 1994
• MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures
  Superlattices and Microstructures, 1994
• Shape transition in growth of strained islands: Spontaneous formation of quantum wires
  Physical Review Letters, 1993
• Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of ${\mathrm{In}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As on GaAs(100)
  Physical Review B, 1992
• InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy
  Applied Physics Letters, 1990
• Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
  Physical Review Letters, 1990
• Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces
  Applied Physics Letters, 1989
• New approach to the high quality epitaxial growth of lattice-mismatched materials
  Applied Physics Letters, 1986
• Effect of coherency strain and misfit dislocations on the mode of growth of thin films
  Thin Solid Films, 1975
• The equilibrium of crystal surfaces
  Surface Science, 1964