Strain variation with sample thickness in GaN grown by hydride vapor phase epitaxy
- 14 July 2000
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (3) , 1460-1463
- https://doi.org/10.1063/1.373839
Abstract
High quality GaN crystals can be grown on sapphire by hydride vapor phase epitaxy. The thermal expansion mismatch between sapphire and GaN produces strain in the GaN crystal as it is cooled from the growth temperature to room temperature. The strain is evidenced by shifts in the photoluminescence and reflectance line positions. By analyzing the surface strain as the crystal thickness is increased, the thickness required to obtain zero surface strain can be estimated. This structure might provide a lattice matched and thermally matched substrate for further epitaxial growth of GaN.This publication has 13 references indexed in Scilit:
- Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurementsApplied Physics Letters, 1997
- Growth of gallium nitride by hydride vapor-phase epitaxyJournal of Crystal Growth, 1997
- Optical properties of tensile-strained wurtzite GaN epitaxial layersApplied Physics Letters, 1997
- Biaxial strain dependence of exciton resonance energies in wurtzite GaNJournal of Applied Physics, 1997
- Oscillator strengths for optical band-to-band processes in GaN epilayersPhysical Review B, 1996
- Effect of strain on GaN exciton spectraSemiconductor Science and Technology, 1996
- Exciton fine structure in undoped GaN epitaxial filmsPhysical Review B, 1996
- Free and bound excitons in thin wurtzite GaN layers on sapphireSemiconductor Science and Technology, 1996
- Decay measurements of free- and bound-exciton recombination in doped GaAs/As quantum wellsPhysical Review B, 1991
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960