Dose and energy dependence of interface trap formation in cobalt-60 and X-ray environments

This publication has 18 references indexed in Scilit:

• Effect of bias on the response of metal-oxide-semiconductor devices to low-energy x-ray and cobalt-60 irradiation
  Applied Physics Letters, 1988
• An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors
  IEEE Transactions on Nuclear Science, 1987
• Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides
  IEEE Transactions on Nuclear Science, 1986
• The Relationship between 60Co and 10-keV X-Ray Damage in MOS Devices
  IEEE Transactions on Nuclear Science, 1986
• Use of the Subthreshold Behavior to Compare X-Ray and CO-60 Radiation-Induced Defects in MOS Transistors
  IEEE Transactions on Nuclear Science, 1986
• Defect Production in SiO2 by X-Ray and Co-60 Radiations
  IEEE Transactions on Nuclear Science, 1985
• Accounting for Dose-Enhancement Effects with CMOS Transistors
  IEEE Transactions on Nuclear Science, 1985
• A reliable approach to charge-pumping measurements in MOS transistors
  IEEE Transactions on Electron Devices, 1984
• Correlating the Radiation Response of MOS Capacitors and Transistors
  IEEE Transactions on Nuclear Science, 1984
• Mosfet and MOS Capacitor Responses to Ionizing Radiation
  IEEE Transactions on Nuclear Science, 1984