Substrate selective deposition and etching of silicon thin films
- 15 January 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (2) , 879-884
- https://doi.org/10.1063/1.359013
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- An Approach to High Quality a-Ge:H by VHF DepositionMRS Proceedings, 1993
- Mechanism of High Rate a-Si:H Deposition in a VHF PlasmaMRS Proceedings, 1993
- Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor DepositionJapanese Journal of Applied Physics, 1992
- Selective Deposition and Bond Strain Relaxation in Silicon PECVD Using Time Modulated Silane FlowJapanese Journal of Applied Physics, 1992
- The Physics of Plasma Deposition of Microcrystalline SiliconMRS Proceedings, 1992
- Growth of Amorphous, Microcrystalline, and Epitaxial Silicon in Low Temperature Plasma DepositionMRS Proceedings, 1990
- Preparation and Characterization of Highly Conductive (100 S/cm) Phosphorus Doped νc-Si:H Films Deposited Using the VHF-GD TechniqueMRS Proceedings, 1989
- Electronic and Structural Characterization of the Near Surface Layer and the Bulk in νc-Si:H Prepared with Hydrogen dilutionMRS Proceedings, 1989
- Preparation of a-Si:H Films by VHF Plasma CVDMRS Proceedings, 1988
- Raman scattering from small particle size polycrystalline siliconSolid State Communications, 1981