Ferroelectric/Photoconductor Memory Device
- 1 April 1971
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (5) , 1842-1845
- https://doi.org/10.1063/1.1660454
Abstract
Tests have shown that it is possible to switch a ferroelectric/photoconductor memory device between its ``1'' and ``0'' memory states in 10 μsec with 10 W/cm2 irradiance. Both a He–Ne laser and a CRT have been used to address the device which stores the bits of information as close as 25 μ apart. The device can retain stored information for more than 60 h with power off, and withstand 107 disturb pulses in the dark.This publication has 7 references indexed in Scilit:
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