Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Single crystalline GaN-layers were implanted with radioactive 167Tm and 169yb ions, and their lattice sites were determined using the emission channeling technique. After the decay of 167Tm to 167Er, photoluminescence studies were performed. Upon room temperature implantation, rare earth atoms immediately occupy relaxed substitutional sites with an average relaxation of about 0.025 nm. Isochronal annealing treatments up to 800 °C and co-implantation of oxygen to a dose an order of magnitude greater than that of the Tm or Yb do not influence the rare earth lattice sites. A variety of different rare earth related luminescence lines are observed, and co-implantation of oxygen strongly changes the line intensities.Keywords
This publication has 14 references indexed in Scilit:
- Recovery of Structural Defects in GaN After Heavy Ion ImplantationMRS Proceedings, 1997
- Emission channelingHyperfine Interactions, 1996
- Electroluminescence from erbium and oxygen coimplanted GaNApplied Physics Letters, 1996
- GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layersApplied Physics Letters, 1995
- Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substratesApplied Physics Letters, 1995
- 1.54-μm photoluminescence from Er-implanted GaN and AlNApplied Physics Letters, 1994
- The new CERN-ISOLDE on-line mass-separator facility at the PS-BoosterNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Nitrogen and potentialn-type dopants in diamondPhysical Review Letters, 1991
- Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materialsElectronics Letters, 1989
- The Stopping and Range of Ions in SolidsPublished by Springer Nature ,1982