Measurement of the electron density and the attachment rate coefficient in silane/helium discharges
Open Access
- 1 August 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (3) , 1344-1348
- https://doi.org/10.1063/1.336105
Abstract
Measurements of the electron density in dc and pulsed silane/helium discharges show that the addition of silane to the gas mixture causes a large reduction in the electron density. By monitoring the electron decay time in the afterglow, it is found that the dominant electron loss mechanism in silane/helium is not ambipolar diffusion to the walls, but instead is a volumetric loss process, most likely dissociative attachment of electrons to a product of the silane dissociation. A lower bound for the rate coefficient for this loss process has been determined to be 2.65×10−10 cm3/sec.This publication has 5 references indexed in Scilit:
- Positive and negative ions in silane and disilane multipole dischargesInternational Journal of Mass Spectrometry and Ion Processes, 1984
- Ion and radical reactions in the silane glow discharge deposition of a-Si:H filmsPlasma Chemistry and Plasma Processing, 1982
- Ionic species in a silane plasmaApplied Physics Letters, 1980
- Mass spectrometry of a silane glow discharge during plasma deposition of a-Si: H filmsThin Solid Films, 1980
- Structure and stability of SiH+4Chemical Physics Letters, 1978