Optical gain of optically pumped Al0.1Ga0.9N/GaN double heterostructure at room temperature
- 21 March 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (12) , 1535-1536
- https://doi.org/10.1063/1.111883
Abstract
In this letter, we report the measurement of the gain of an optically pumped Al0.1Ga0.9N/GaN double heterostructure (DH) which was prepared on a sapphire substrate by metalorganic vapor phase epitaxy using an AlN buffer layer. At room temperature, the optical gain of stimulated emission from Al0.1Ga0.9N/GaN DH was measured to be 160 cm−1 at pumping power density of 200 kW/cm2.Keywords
This publication has 9 references indexed in Scilit:
- Growth of Single Crystal AlxGa1-xN Films on Si Substrates by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from Al0.1Ga0.9N/GaN Double HeterostructureJapanese Journal of Applied Physics, 1993
- The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layerJournal of Crystal Growth, 1993
- Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer LayerJapanese Journal of Applied Physics, 1990
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Stimulated Emission and Laser Action in Gallium NitrideApplied Physics Letters, 1971
- DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALSApplied Physics Letters, 1971