Low-density high-mobility electron gas in wide parabolic GaAs/AlxGa1−xAs wells
- 24 December 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (26) , 2823-2825
- https://doi.org/10.1063/1.103753
Abstract
Remotely doped wide parabolic GaAs/AlxGa1−xAs wells are used to create thick (≳ 1000 Å) layers of high‐mobility (≳ 2×105 cm2/V s) electron gas with three‐dimensional densities below (by a factor ∼3) the metal‐insulator transition for doped GaAs. The temperature dependences of the Hall mobility and sheet density show no qualitative changes in a series of three samples spanning the metal‐insulator transition. Shubnikov–de Haas oscillation measurements are used to determine the width of the electron gas layers.Keywords
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