Observation of random-telegraph noise in resonant-tunneling diodes
- 3 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (18) , 2262-2264
- https://doi.org/10.1063/1.109435
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Studies of flicker noise in In0.53Ga0.47As/AlAs/InAs resonant tunneling diodesSolid-State Electronics, 1992
- Light-activated telegraph noise in AlGaAs tunnel barriers: Optical probing of a single defectPhysical Review Letters, 1991
- Low frequency noise studies of AlAs — GaAs — AlAs quantum well diodes at 77 KCryogenics, 1990
- Noise characteristics of double-barrier resonant-tunneling structures below 10 kHzPhysical Review B, 1990
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- Defect Interactions and Noise in Metallic NanoconstrictionsPhysical Review Letters, 1988
- noise and other slow, nonexponential kinetics in condensed matterReviews of Modern Physics, 1988
- Shallow and deep donors in direct-gap -type grown by molecular-beam epitaxyPhysical Review B, 1984
- Comprehensive analysis of Si-doped (): Theory and experimentsPhysical Review B, 1984
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984