Developments and trends in MBE of II–VI Hg-based compounds
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 483-488
- https://doi.org/10.1016/0022-0248(87)90437-4
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular-beam-epitaxial growth of Hg1−xCdxTe and CdTeJournal of Applied Physics, 1986
- Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxyApplied Physics Letters, 1986
- Molecular beam epitaxial growth and characterization of Cd1−xZnxTe, Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe on GaAs(100)Journal of Vacuum Science & Technology B, 1986
- Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxyApplied Physics Letters, 1984
- Recent progress on LADA growth of HgCdTe and CdTe epitaxial layersJournal of Vacuum Science & Technology A, 1983
- Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1983
- Molecular beam epitaxy of CdTe and Hg1-xCdxTe ON GaAs (100)Journal of Electronic Materials, 1983
- Summary Abstract: MBE growth of (Hg, Cd, and Te) compoundsJournal of Vacuum Science & Technology A, 1983
- CdxHg1−xTe n-type layers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Molecular beam epitaxy of II–VI compounds: CdxHg1−xTeJournal of Crystal Growth, 1981