Simple model for the hysteretic behavior of thin-film electroluminescent devices
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (12) , 2604-2611
- https://doi.org/10.1109/16.158682
Abstract
The hysteretic behavior of TFEL devices can be simulated relatively well with the numerical model introduced by Howard, Sahni, and Alt. An approximate model is developed by introducing a time-independent space-charge distribution. With this new method, steady-state solutions can be calculated very efficiently. Hysteretic curves obtained with this method are given for different frequencies and the results are discussedKeywords
This publication has 11 references indexed in Scilit:
- Analytical model for thin-film electroluminescent devicesJournal of Applied Physics, 1990
- Measuring on thin film electroluminescent devicesPhysica Status Solidi (a), 1988
- A computationally simple model for hysteretic thin-film electroluminescent devicesIEEE Transactions on Electron Devices, 1988
- Current and Field Characteristics and Memory Mechanism of TFEL DevicesJapanese Journal of Applied Physics, 1986
- Mechanisms of the negative-resistance characteristics in AC thin-film electroluminescent devicesIEEE Transactions on Electron Devices, 1983
- Experimental results on the stability of ac thin-film electroluminescent devicesJournal of Applied Physics, 1982
- A simple model for the hysteretic behavior of ZnS:Mn thin film electroluminescent devicesJournal of Applied Physics, 1982
- Modeling a.c. thin-film electroluminescent devicesJournal of Luminescence, 1981
- Memory in thin-film electroluminescent devicesJournal of Luminescence, 1981
- Studies of temperature effects in AC thin-film EL devicesIEEE Transactions on Electron Devices, 1981