Polysilicon strain sensors using shear piezoresistance
- 30 November 1988
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 15 (3) , 257-272
- https://doi.org/10.1016/0250-6874(88)87015-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Analysis and design of a four-terminal silicon pressure sensor at the centre of a diaphragmSensors and Actuators, 1987
- Graphical Representation of the Piezoresistance Coefficients in Silicon-Shear Coefficients in PlaneJapanese Journal of Applied Physics, 1987
- Polycrystalline silicon as a strain gauge materialJournal of Physics E: Scientific Instruments, 1986
- Polycrystalline silicon strain sensorsSensors and Actuators, 1985
- Hall-effect devices as strain and pressure sensorsSensors and Actuators, 1982
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978
- Young's Modulus, Shear Modulus, and Poisson's Ratio in Silicon and GermaniumJournal of Applied Physics, 1965
- Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance EffectsJournal of Applied Physics, 1961
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954
- Measurement of the Elastic Constants of Silicon Single Crystals and Their Thermal CoefficientsPhysical Review B, 1951