Quasiparticle calculation of valence band offset of AlAs-GaAs(001)
- 31 May 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 66 (6) , 585-588
- https://doi.org/10.1016/0038-1098(88)90213-x
Abstract
No abstract availableKeywords
This publication has 32 references indexed in Scilit:
- Probing Semiconductor-Semiconductor InterfacesPhysics Today, 1987
- Light scattering determination of band offsets inquantum wellsPhysical Review B, 1986
- Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy compositionJournal of Applied Physics, 1986
- A critical review of heterojunction band offsetsJournal of Vacuum Science & Technology B, 1985
- Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignmentJournal of Vacuum Science & Technology B, 1985
- Barrier control and measurements: Abrupt semiconductor heterojunctionsJournal of Vacuum Science & Technology B, 1984
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion ElectronegativityPhysical Review Letters, 1976
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962