X-Ray Scattering Study of Porous Silicon Growth during Anodic Dissolution
- 17 February 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 78 (7) , 1367-1370
- https://doi.org/10.1103/physrevlett.78.1367
Abstract
Formation of porous silicon at the surface of -type silicon in HF solution has been investigated in situ during anodic dissolution by x-ray reflectivity and diffuse-scattering measurements. Rings of diffuse scattering around Bragg reflections indicate a pore-pore distribution controlled by a space-charge region at the silicon/solution interface. Experimental results for evolution of the interface during the dissolution process are described by an Edward-Wilkinson–type growth model.
Keywords
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