X-Ray Scattering Study of Porous Silicon Growth during Anodic Dissolution

Abstract
Formation of porous silicon at the surface of p+-type silicon in HF solution has been investigated in situ during anodic dissolution by x-ray reflectivity and diffuse-scattering measurements. Rings of diffuse scattering around Bragg reflections indicate a pore-pore distribution controlled by a space-charge region at the silicon/solution interface. Experimental results for evolution of the interface during the dissolution process are described by an Edward-Wilkinson–type growth model.