Single and Double δ-Doped Al0.25Ga0.75As/In0.25Ga0.75As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
- 1 February 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (2R) , 971-975
- https://doi.org/10.1143/jjap.33.971
Abstract
Single and double δ-doped Al0.25Ga0.75As/In0.25Ga0.75As pseudomorphic heterostructures grown by molecular-beam epitaxy are examined to improve the performance of high-electron-mobility transistors (HEMTs). Double δ-doped layers, which are inserted in uniformly-doped AlGaAs carrier supply layers, can reduce the distance between the surface and the channel down to 19 nm without degrading the electrical properties. The mobility and sheet electron concentration at room temperature are 6050 cm2/(V·s) and 2.32×1012 cm-2, respectively ( 16270 cm2/(V·s) and 2.30×1012 cm-2 at 77 K). Shubnikov-de Haas oscillations confirm that the parallel conduction in the carrier supply layer is negligible. This work indicates that δ-doping in uniformly-doped carrier supply layers can be a key factor in improving the performance of HEMTs.Keywords
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