High Performance Double Delta Doping GaAs/In0.25Ga0.75As/GaAs Pseudomorphic Heterostructure
- 1 March 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (3A) , L303
- https://doi.org/10.1143/jjap.32.l303
Abstract
We report the preparation of high two-dimensional electron gas (2DEG) concentration and mobility in double delta doping, single quantum well GaAs/In0.25Ga0.75As/GaAs pseudomorphic heterostructure by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Superior in gate voltage swing (3 V), saturation current density, and extrinsic transconductance to those of conventional In x Ga1-x As/GaAs pseudomorphic heterostructures with similar gate length (2 µm) ever reported, were achieved.Keywords
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