A δ-doped GaAs/In0.37Ga0.63As/GaAs high electron mobility transistor prepared by low-pressure metalorganic chemical vapor deposition
- 1 May 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (5) , 635-638
- https://doi.org/10.1016/0038-1101(92)90029-c
Abstract
No abstract availableKeywords
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