An anisotype GaAs/In/sub x/Ga/sub 1-x/As heterojunction field-effect transistor for digital logic applications
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (1) , 30-32
- https://doi.org/10.1109/55.46921
Abstract
An anisotype heterojunction field-effect transistor (A-HJFET) for GaAs digital integrated circuit applications is proposed. A thin, highly doped, strained In/sub x/Ga/sub 1-x/As (x<or=0.2) n-channel is employed for improved transconductance while a p/sup +/-GaAs cap is used to enhance the dynamic gate voltage range of the device. Prototype devices with 5- mu m gate lengths show a maximum transconductance of 80 mS/mm at V/sub ds/=2 V and a forward gate bias voltage of up to +2 V without significant leakage current.Keywords
This publication has 15 references indexed in Scilit:
- Stable and metastable (Al,Ga)As/(In,Ga)As n-channel strained quantum well field-effect transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Stability of strained quantum-well field-effect transistor structuresIEEE Electron Device Letters, 1988
- 0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHzIEEE Electron Device Letters, 1988
- Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductanceIEEE Electron Device Letters, 1988
- Reactive ion etch process with highly controllable GaAs-to-AlGaAs selectivity using SF6 and SiCl4Applied Physics Letters, 1987
- p-channel, strained quantum well, field-effect transistorApplied Physics Letters, 1986
- Design Analysis of GaAs Direct Coupled Field Effect Transistor LogicIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1986
- Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy compositionJournal of Applied Physics, 1986
- An improved technique for selective etching of GaAs and Ga1−xAlxAsJournal of Applied Physics, 1980
- A study of high-speed normally off and normally on Al0.5Ga0.5As heterojunction gate GaAs FET's (HJFET)IEEE Transactions on Electron Devices, 1978