Tantalum oxide capacitors for GaAs monolithic integrated circuits

1 May 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (5) , 127-129
https://doi.org/10.1109/edl.1982.25508

Abstract

The performance of a high-yield tantalum oxide capacitor for use in GaAs monolithic microwave integrated circuits is described. The integral metal-insulator-metal sandwich structure is reactively sputter-deposited at low temperatures, compatible with a photoresist lift-off process, on semi-insulating GaAs substrate. Dielectric constants of 20-25 were achieved in the capacitors fabricated. An initial application of this process as an interstage coupling capacitor for a two-stage preamplifier is given.

Keywords

This publication has 5 references indexed in Scilit:

Design Considerations for Monolithic Microwave Circuits
IEEE Transactions on Microwave Theory and Techniques, 1981
A 31-GHz monolithic GaAs mixer/preamplifier circuit for receiver applications
IEEE Transactions on Electron Devices, 1981
Improved properties of TaNTa2O5NxAl capacitors
Thin Solid Films, 1979
The electrical properties of resistive and dielectric thin films prepared by reactive sputtering from a tantalum-titanium composite target
Thin Solid Films, 1978
Electron Transport Mechanisms in Thin Insulating Films
Physical Review B, 1962