Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface

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Abstract
The behavior of Si(100) surface defects induced by Fe contamination was studied with transmission electron microscopy. After annealing at 1150°C for 1 hour and a subsequent heat treatment at 850°C for 2 hours, Fe-containing precipitates were observed in Si substrate in close vicinity to the interface of Si and SiO2 formed during the annealing. One of these precipitates is identified as FeSi-type silicide. In addition, the inclusions which were confirmed to be Fe3O4 or γ-Fe2SiO4 were observed in the surface thermal SiO2 layer. These results demonstrate that Fe atoms diffuse into the Si substrate during annealing at 1150°C and precipitate at a Si/SiO2 interface, while Fe atoms left on the surface form inclusions in the surface SiO2 layer. Under an additional thermal oxidation at 1000°C, oxidation-induced stacking faults were formed. They were not decorated at all in contrast with those induced by Cu or Ni contamination.

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