Waveguide-coupled detector in zero-change complementary metal–oxide–semiconductor
- 27 July 2015
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 107 (4) , 041104
- https://doi.org/10.1063/1.4927393
Abstract
We report a waveguide-coupled photodetector realized in a standard CMOS foundry without requiring changes to the process flow (zero-change CMOS). The photodetector exploits carrier generation in the silicon-germanium normally utilized as stressor in pFETs. The measured responsivity and 3 dB bandwidth are of 0.023 A/W at a wavelength of 1180 nm and 32 GHz at −1 V bias (18 GHz at 0 V bias). The dark current is less than 10 pA and the dynamic range is larger than 60 dB.Keywords
Funding Information
- Defense Advanced Research Projects Agency (HR0011-11-9-0009, HR0011-11-C-0100)
This publication has 19 references indexed in Scilit:
- Photonics design tool for advanced CMOS nodesIET Optoelectronics, 2015
- Integration of silicon photonics in bulk CMOSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2014
- Bulk-Si photonics technology for DRAM interface [Invited]Photonics Research, 2014
- Depletion-mode carrier-plasma optical modulator in zero-change advanced CMOSOptics Letters, 2013
- A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2012
- Near-Infrared Sub-Bandgap All-Silicon Photodetectors: A ReviewInternational Journal of Optics and Applications, 2012
- A 90-nm logic technology featuring strained-siliconIEEE Transactions on Electron Devices, 2004
- Si/SiGe heterostructures: from material and physics to devices and circuitsSemiconductor Science and Technology, 2004
- Pressure dependence of the band gaps of semiconductorsPhysical Review B, 1989
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958